. PPT - Understanding Ideal 2-Terminal MOS Capacitor/Diode Modeling and Characterization PowerPoint Presentation - ID: 4094989
PPT - Understanding Ideal 2-Terminal MOS Capacitor/Diode Modeling and Characterization PowerPoint Presentation - ID: 4094989
PPT - Understanding Ideal 2-Terminal MOS Capacitor/Diode Modeling and Characterization PowerPoint Presentation - ID: 4094989

Understanding Ideal 2-Terminal MOS Capacitor/Diode Modeling and Characterization

Explore the band models, flat-band conditions, and equivalent circuits for MOS capacitors and diodes to grasp surface effects and oxide capacitance in semiconductor devices. References included.

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  • semiconductor devices
  • mos capacitor
  • diode modeling
  • band models
  • surface effects
  • oxide capacitance
  • equivalent circuit
  • semiconductor physics
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Understanding Ideal 2-Terminal MOS Capacitor/Diode Modeling and Characterization

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  1. Semiconductor Device Modeling and Characterization – EE5342 Lecture 30 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/
  2. Ideal 2-terminalMOS capacitor/diode conducting gate, area = LW Vgate -xox SiO2 0 y 0 L silicon substrate tsub Vsub x
  3. Band models (approx. scale) metal silicon dioxide p-type s/c Eo Eo qcox ~ 0.95 eV Eo qcSi= 4.05eV qfm= 4.1 eV for Al Ec qfs,p Eg,ox ~ 8 eV Ec EFm EFi EFp Ev Ev
  4. Flat band condition (approx. scale) Al SiO2 p-Si q(fm-cox)= 3.15 eV q(cox-cSi)=3.1eV Ec,Ox qffp= 3.95eV EFm Ec Eg,ox~8eV EFi EFp Ev Ev
  5. Equivalent circuitfor Flat-Band • Surface effect analogous to the extr Debye length = LD,extr = [eVt/(qNa)]1/2 • Debye cap, C’D,extr = eSi/LD,extr • Oxide cap, C’Ox = eOx/xOx • Net C is the series comb C’Ox C’D,extr
  6. Accumulation forVgate< VFB Vgate < VFB -xox SiO2 EOx,x
  7. References * Semiconductor Physics & Devices, by Donald A. Neamen, Irwin, Chicago, 1997. **Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986
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